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Usher, Brian.

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Add  Strain cancellation by indium incorporation for the calibration of nitrogen fractions in GaAsN.
Authors: Hashim, Hashimah. | Usher, Brian. | IEEE International Conference on Semiconductor Elecronics (ICSE) (2010 : Melaka, Mallaysia)
Date: 2010.
Subject: 0204 (four-digit-FOR)
Language: en
Type: conference paper
Identifier: http://hdl.handle.net/1959.9/394260
Description: DEST collection year : 2011
Add  Ga droplet morphology on GaAs(001) studied by Lloyd's mirror photoemission electron microscopy
Authors: Tang, W. X. | Jesson, David E. | Pavlov, Konstantin M. | Morgan, M. J. | Usher, Brian.
Date: 2009.
Subject: 0204 (four-digit-FOR)
Language: en
Type: journal article
Identifier: http://hdl.handle.net/1959.9/348382
Description: DEST collection year : 2011
Add  Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD.
Authors: Chen, P. P. | Prince, K. E. | Timmers, H. | Shrestha, S. K. | Usher, Brian. | Butcher, K. S. A. | Wintrebert-Fouquet, M. | Wuhrer, R. | Phillips, M. | ONR International Indium Nitride Workshop (2nd: 2006 : Kailua-Kona, USA)
Date: 2006.
Subject: 240203 Condensed Matter Physics-Electronic and Magnetic Properties; Superconductivity | 030600 Physical Chemistry (incl. Structural) | 0306 (four-digit-FOR)
Language: en
Type: conference paper
Identifier: http://hdl.handle.net/1959.9/460594
Description: DEST collection year:2007
Add  High Temperature Growth of the Dilute Nitride GaAsN using a Nitrogen ECR Plasma Source
Authors: Usher, Brian. | Warminski, Tadeusz. | Dieing, Thomas. | Prince, Kathryn. | International Conference on Nanoscience and Nanotechnology (2006 : Brisbane, Australia)
Date: 2006.
Subject: 240204 Condensed Matter Physics-Other | 020406 Surfaces and Structural Properties of Condensed Matter | 0204 (four-digit-FOR)
Language: en
Type: conference paper
Identifier: http://hdl.handle.net/1959.9/351098
Description: DEST collection year:2007
Full Text: Full Text
Add  Investigation of HgTe-HgCdTe superlattices by high resolution x-ray diffraction.
Authors: Hatch, S. D. | Sewell, R. H. | Dell, J. M. | Faraone, Lorenzo. | Becker, C. R. | Usher, Brian.
Date: 2006.
Subject: 240202 Condensed Matter Physics-Structural Properties | 090600 Electrical and Electronic Engineering | 0204 (four-digit-FOR)
Language: en
Type: journal article
Identifier: http://hdl.handle.net/1959.9/449032
Description: DEST collection year:2007
Add  High-Resolution X-Ray Diffraction Studies of Molecular Beam Epitaxy-Grown HgCdTe Heterostructures and CdZnTe Substrates
Authors: Sewell, R. H. | Musca, C. A. | Dell, J. M. | Faraone, Lorenzo. | Usher, Brian. | Dieing, Thomas.
Date: 2005.
Subject: 240204 Condensed Matter Physics-Other | 090600 Electrical and Electronic Engineering | 0204 (four-digit-FOR)
Language: en
Type: journal article
Identifier: http://hdl.handle.net/1959.9/397651
Description: DEST collection year:2006
Full Text: Full Text
Add  Nitrogen plasma source characterization by SIMS depth profiling and high-resolution x-ray diffraction.
Authors: Dieing, Thomas. | Usher, Brian. | Warminski, Tadeusz. | Prince, K. E. | School of Engineering and Mathematical Sciences. | Australian Conference on Nuclear and Complementary Techniques of Analysis. (14th : Wellington, New Zealand) | Vacuum Society of Australia Congress (8th : Wellington, New Zealand)
Date: 2005.
Subject: 240204 Condensed Matter Physics-Other
Language: en
Type: conference paper
Identifier: http://hdl.handle.net/1959.9/334943
Description: DEST collection year:2006
Add  Surface reactions of 1-Propanethiol on GaAs (100)
Authors: Donev, Suzana. | Paris, N. | Pigram, Paul. | Brack, Narelle. | Usher, Brian. | Singh, N. K.
Date: 2005.
Subject: 250103 Colloid and Surface Chemistry | 030603 Colloid and Surface Chemistry | 0204 (four-digit-FOR)
Language: en
Type: journal article
Identifier: http://hdl.handle.net/1959.9/341657
Description: DEST collection year:2006
Full Text: Full Text
Add  Influence of N2 Background Pressure on the Incorporation of arsenic during Molecular Beam Epitaxy growth of GaAs
Authors: Dieing, Thomas. | Usher, Brian. | School of Engineering and Mathematical Sciences.
Date: 2004.
Subject: 240204 Condensed Matter Physics-Other | 091203 Compound Semiconductors | 0912 (four-digit-FOR)
Language: en
Type: journal article
Identifier: http://hdl.handle.net/1959.9/342182
Description: DEST collection year:2005
Full Text: Full Text
Add  A RHEED study of MBE growth of ZNSE on GaAS(111)A-(2x2)
Authors: Gard, Faramarz Sahra. | Riley, John. | Leckey, Robert. | Usher, Brian. | School of Engineering and Mathematical Sciences
Date: 2003.
Subject: 240204 Condensed Matter Physics-Other | 030600 Physical Chemistry (incl. Structural) | 0306 (four-digit-FOR)
Language: en
Type: journal article
Identifier: http://hdl.handle.net/1959.9/489819
Description: DEST collection year:2004
Add  Wafer Curvature in Molecular Beam Epitaxy Grown Heterostructures.
Authors: Dieing, Thomas. | Usher, Brian. | School of Engineering and Mathematical Sciences.
Date: 2003.
Subject: 240202 Condensed Matter Physics-Structural Properties | 020406 Surfaces and Structural Properties of Condensed Matter | 0204 (four-digit-FOR)
Language: en
Type: journal article
Identifier: http://hdl.handle.net/1959.9/333021
Description: c 260a
Full Text: Full Text
Add  A force balance approach to determining dislocation configurations.
Authors: Madebo, Melbratu Ditcha. | Usher, Brian. | Riley, John. | School of Engineering and Mathematical Sciences. | Conference on Optoelectronic and Microelectronic Materials and Devices. (2002 : Sydney, Australia)
Date: 2002.
Subject: 240202 Condensed Matter Physics-Structural Properties | 020406 Surfaces and Structural Properties of Condensed Matter | 0204 (four-digit-FOR)
Language: en
Type: conference paper
Identifier: http://hdl.handle.net/1959.9/485469
Description: DEST collection year:2004
Full Text: Full Text
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